JPS59139675A - 接点層の開口の側壁に絶縁分離部分を形成する方法 - Google Patents

接点層の開口の側壁に絶縁分離部分を形成する方法

Info

Publication number
JPS59139675A
JPS59139675A JP58216372A JP21637283A JPS59139675A JP S59139675 A JPS59139675 A JP S59139675A JP 58216372 A JP58216372 A JP 58216372A JP 21637283 A JP21637283 A JP 21637283A JP S59139675 A JPS59139675 A JP S59139675A
Authority
JP
Japan
Prior art keywords
layer
polysilicon
etching
contact
silicon dioxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58216372A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0312768B2 (en]
Inventor
ジヨ−ジ・リチヤ−ド・ゴス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS59139675A publication Critical patent/JPS59139675A/ja
Publication of JPH0312768B2 publication Critical patent/JPH0312768B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP58216372A 1982-12-30 1983-11-18 接点層の開口の側壁に絶縁分離部分を形成する方法 Granted JPS59139675A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US45491982A 1982-12-30 1982-12-30
US454919 1995-05-31

Publications (2)

Publication Number Publication Date
JPS59139675A true JPS59139675A (ja) 1984-08-10
JPH0312768B2 JPH0312768B2 (en]) 1991-02-21

Family

ID=23806611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58216372A Granted JPS59139675A (ja) 1982-12-30 1983-11-18 接点層の開口の側壁に絶縁分離部分を形成する方法

Country Status (1)

Country Link
JP (1) JPS59139675A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63501393A (ja) * 1985-10-16 1988-05-26 ブリティシュ・テレコミュニケ−ションズ・パブリック・リミテッド・カンパニ 基板への素子の取付け方法および構造

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211775A (en) * 1981-06-23 1982-12-25 Nec Corp Semiconductor device and manufacture thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211775A (en) * 1981-06-23 1982-12-25 Nec Corp Semiconductor device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63501393A (ja) * 1985-10-16 1988-05-26 ブリティシュ・テレコミュニケ−ションズ・パブリック・リミテッド・カンパニ 基板への素子の取付け方法および構造

Also Published As

Publication number Publication date
JPH0312768B2 (en]) 1991-02-21

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